(PRICE/TC) MOSFET, N CHANNEL, 900V, 5.8A, TO-263; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:900V; CONTINUOUS DRAIN CURRENT ID:5.8A; ON RESISTANCE RDS(ON):1.56OHM; TRANSISTOR MOUNTING:SURFACE MOUNT; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 900V 5.8A D2PAK
MOSFET N-Ch 900V 5.8A SuperMESH D2PAK
MOSFET N-Ch 900V 5.8A SuperMESH D2PAK
MOSFET N-Ch 900V 5.8A SuperMESH D2PAK
N-Channel 900V 5.8A (Tc) 140W (Tc) Surface Mount D2PAK
N-Channel 900V 5.8A (Tc) 140W (Tc) Surface Mount D2PAK
N-Channel 900V 5.8A (Tc) 140W (Tc) Surface Mount D2PAK
Manufacturer: STMicroelectronics
Win Source Part Number: 031085-STB6NK90ZT4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 140W (Tc)
Family Name: STB6NK90
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 5.8A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 100μA
Max Gate Charge: 60.5nC @ 10V
Max Input Capacitance: 1350pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2 Ohm @ 2.9A, 10V
Alternative Parts (Cross-Reference): FMC06N90E; FS7VS-18A; FMC07N90E;
Introduction Date: November 28, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
MOSFET N-CH 900V 5.8A D2PAK
MOSFET, N CHANNEL, 900V, 5.8A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:5.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
MOSFET N-Ch 900 Volt 5.8 A Zener SuperMESH
| Radwell International | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 36404367 | STB6NK90ZT4 | 6875140 | 6875140P | 497-6555-1-ND | 031085-STB6NK90ZT4 | STB6NK90ZT4 | 33R1128 | STB6NK90ZT4 |
| Product Name | Transistor | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB6NK90ZT4 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 900V, 5.8A, To-263; Channel Type Stmicroelectronics | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 900 volts | 900 volts | |||||||
| IDSS | 5800 milliamps | 5800 milliamps | |||||||
| PD | 140000 milliwatts | 140000 milliwatts |