STMicroelectronics, Inc. FETs - Single - STB6N80K5 STB6N80K5

Description
Manufacturer: STMicroelectronics Win Source Part Number: 808331-STB6N80K5 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800V Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 85W (Tc) Popularity: Medium Fake Threat In the Open Market: 76 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 1.6Ohm at 2A, 10V Gate Charge (Qg) (Maximum) at Vgs: 7.5nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 255pF at 100V Current - Continuous Drain (Id) at 25°C: 4.5A (Tc) Vgs(th) (Maximum) at Id: 5V at 100μA Part Number Series: STB6N Maximum Vgs: 30V
  • FETs - Single - STB6N80K5 - 808331-STB6N80K5 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - STB6N80K5 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 497-14974-1-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-14974-2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-14974-6-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB6N80K5 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 800V, 4.5A, 150Deg C, 85W Rohs Compliant Stmicroelectronics - 69AH2679 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 808331-STB6N80K5 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800V Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 85W (Tc) Popularity: Medium Fake Threat In the Open Market: 76 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 1.6Ohm at 2A, 10V Gate Charge (Qg) (Maximum) at Vgs: 7.5nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 255pF at 100V Current - Continuous Drain (Id) at 25°C: 4.5A (Tc) Vgs(th) (Maximum) at Id: 5V at 100μA Part Number Series: STB6N Maximum Vgs: 30V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STB6N80K5 - 808331-STB6N80K5 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STB6N80K5
808331-STB6N80K5
FETs - Single - STB6N80K5 808331-STB6N80K5
Manufacturer: STMicroelectronics Win Source Part Number: 808331-STB6N80K5 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800V Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 85W (Tc) Popularity: Medium Fake Threat In the Open Market: 76 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 1.6Ohm at 2A, 10V Gate Charge (Qg) (Maximum) at Vgs: 7.5nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 255pF at 100V Current - Continuous Drain (Id) at 25°C: 4.5A (Tc) Vgs(th) (Maximum) at Id: 5V at 100μA Part Number Series: STB6N Maximum Vgs: 30V

Manufacturer: STMicroelectronics
Win Source Part Number: 808331-STB6N80K5
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800V
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 85W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 76 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 1.6Ohm at 2A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 7.5nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 255pF at 100V
Current - Continuous Drain (Id) at 25°C: 4.5A (Tc)
Vgs(th) (Maximum) at Id: 5V at 100μA
Part Number Series: STB6N
Maximum Vgs: 30V

Buy Now
Single FETs, MOSFETs - STB6N80K5 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STB6N80K5
Single FETs, MOSFETs STB6N80K5
MOSFET N-CH 800V 4.5A D2PAK

MOSFET N-CH 800V 4.5A D2PAK

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-14974-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14974-1-ND
Single FETs, MOSFETs 497-14974-1-ND
N-Channel 800V 4.5A (Tc) 85W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 800V 4.5A (Tc) 85W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 497-14974-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14974-2-ND
Single FETs, MOSFETs 497-14974-2-ND
N-Channel 800V 4.5A (Tc) 85W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 800V 4.5A (Tc) 85W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 497-14974-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14974-6-ND
Single FETs, MOSFETs 497-14974-6-ND
N-Channel 800V 4.5A (Tc) 85W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 800V 4.5A (Tc) 85W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB6N80K5 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB6N80K5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB6N80K5
MOSFET N-CH 800V 4.5A D2PAK

MOSFET N-CH 800V 4.5A D2PAK

Supplier's Site
Mosfet, N-Ch, 800V, 4.5A, 150Deg C, 85W Rohs Compliant Stmicroelectronics - 69AH2679 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 800V, 4.5A, 150Deg C, 85W Rohs Compliant Stmicroelectronics
69AH2679
Mosfet, N-Ch, 800V, 4.5A, 150Deg C, 85W Rohs Compliant Stmicroelectronics 69AH2679
MOSFET, N-CH, 800V, 4.5A, 150DEG C, 85W ROHS COMPLIANT: YES

MOSFET, N-CH, 800V, 4.5A, 150DEG C, 85W ROHS COMPLIANT: YES

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STB6N80K5
MOSFET STB6N80K5
MOSFET N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in D2PAK package

MOSFET N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in D2PAK package

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 808331-STB6N80K5 STB6N80K5 497-14974-1-ND STB6N80K5 69AH2679 STB6N80K5
Product Name FETs - Single - STB6N80K5 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 800V, 4.5A, 150Deg C, 85W Rohs Compliant Stmicroelectronics MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
PD 85000 milliwatts 85000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-263; SOT3 TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3
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