N-Channel 800V 4.5A (Tc) 85W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 800V 4.5A (Tc) 85W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 800V 4.5A (Tc) 85W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 800V 4.5A D2PAK
N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in a D2PAK package Product overview: STB6N80K5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800 V, 1.3 Ohm, 4.5 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800 V, 1.3 Ohm, 4.5 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB6N80K5 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 808331-STB6N80K5
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800V
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 85W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 76 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 1.6Ohm at 2A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 7.5nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 255pF at 100V
Current - Continuous Drain (Id) at 25°C: 4.5A (Tc)
Vgs(th) (Maximum) at Id: 5V at 100μA
Part Number Series: STB6N
Maximum Vgs: 30V
MOSFET N-CH 800V 4.5A D2PAK
MOSFET, N-CH, 800V, 4.5A, 150DEG C, 85W ROHS COMPLIANT: YES
MOSFET N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in D2PAK package
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-14974-1-ND | STB6N80K5 | 278-STB6N80K5 | 808331-STB6N80K5 | STB6N80K5 | 69AH2679 | STB6N80K5 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 800 V 1.3 Ohm 4.5 A MOSFET Transistor | FETs - Single - STB6N80K5 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 800V, 4.5A, 150Deg C, 85W Rohs Compliant Stmicroelectronics | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 800 volts |
