STMicroelectronics, Inc. Single FETs, MOSFETs STB60NF06T4

N-Channel 60V 60A (Tc) 110W (Tc) Surface Mount D2PAK

N-Channel 60V 60A (Tc) 110W (Tc) Surface Mount D2PAK

N-Channel 60V 60A (Tc) 110W (Tc) Surface Mount D2PAK

60V 60A N-Ch MOSFET D2PAK 16mR Rds(on) Product overview: STB60NF06T4 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB60NF06T4 can be used for catalog matching and distributor lookup.

Manufacturer: STMicroelectronics
Win Source Part Number: 066289-STB60NF06T4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 66nC @ 10V
Max Input Capacitance: 1810pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): AOB2618L; RSJ400N06TL; STB55NE06T4;
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited

MOSFET N-CH 60V 60A D2PAK