N-Channel 55V 80A (Tc) 110W (Tc) Surface Mount D2PAK
MOSFET N-CH 55V 80A D2PAK
Manufacturer: STMicroelectronics
Win Source Part Number: 1102801-STB60N55F3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 2200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.5 mOhm @ 32A, 10V
Alternative Parts (Cross-Reference): IRF1018ESTRLPBF; 2SK3354-ZJ; 2SK3354-ZJ-E1;
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
MOSFET N-CH 55V 80A D2PAK
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 497-5954-2-ND | STB60N55F3 | 1102801-STB60N55F3 | STB60N55F3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB60N55F3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 55 volts | 55 volts |
