STMicroelectronics, Inc. 55V 80A 110W MOSFET Transistor STB60N55F3

55V 80A N-CH MOSFET, 8.5mR, D2PAK, 110W Product overview: STB60N55F3 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 80A, 110W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 80A, 110W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB60N55F3 can be used for catalog matching and distributor lookup.

N-Channel 55V 80A (Tc) 110W (Tc) Surface Mount D2PAK

MOSFET N-CH 55V 80A D2PAK

Manufacturer: STMicroelectronics
Win Source Part Number: 1102801-STB60N55F3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 2200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.5 mOhm @ 32A, 10V
Alternative Parts (Cross-Reference): IRF1018ESTRLPBF; 2SK3354-ZJ; 2SK3354-ZJ-E1;
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited