STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB5NK50Z-1 STB5NK50Z-1

Manufacturer: STMicroelectronics
Win Source Part Number: 066287-STB5NK50Z-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 4.4A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 28nC @ 10V
Max Input Capacitance: 535pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

N-channel 500 V, 1.22 Ohm typ., 4.4 A SuperMESH Power MOSFET in I2PAK package Product overview: STB5NK50Z-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500 V, 1.22 Ohm, 4.4 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500 V, 1.22 Ohm, 4.4 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB5NK50Z-1 can be used for catalog matching and distributor lookup.

N-Channel 500V 4.4A (Tc) 70W (Tc) Through Hole I2PAK (TO-262)