N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a D2PAK package Product overview: STB5N80K5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800 V, 1.50 Ohm, 4 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800 V, 1.50 Ohm, 4 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB5N80K5 can be used for catalog matching and distributor lookup.
N-Channel 800V 4A (Tc) 60W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 800V 4A (Tc) 60W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 800V 4A (Tc) 60W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 800V 4A D2PAK
Win Source Part Number: 978457-STB5N80K5
Category: Discrete Semiconductor Products>Transistors
Series: MDmesh™
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 60W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: -497-16923-2,-497-16
Base Product Number: STB5N80
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 800V 4A D2PAK
MOSFET N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a D2PAK package
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STB5N80K5 | 497-16923-2-ND | STB5N80K5 | 978457-STB5N80K5 | STB5N80K5 | STB5N80K5 |
| Product Name | N-Channel 800 V 1.50 Ohm 4 A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 800 volts |
