STMicroelectronics, Inc. Single FETs, MOSFETs STB5N52K3

Description
N-Channel 525V 4.4A (Tc) 70W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
N-Channel 525V 4.4A (Tc) 70W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

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Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-11091-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-11091-2-ND
Single FETs, MOSFETs 497-11091-2-ND
N-Channel 525V 4.4A (Tc) 70W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 525V 4.4A (Tc) 70W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB5N52K3 - 140349-STB5N52K3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB5N52K3
140349-STB5N52K3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB5N52K3 140349-STB5N52K3
Manufacturer: STMicroelectronics Win Source Part Number: 140349-STB5N52K3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 525V Continuous Drain Current at 25°C: 4.4A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 545pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 140349-STB5N52K3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 525V
Continuous Drain Current at 25°C: 4.4A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 545pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB5N52K3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB5N52K3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB5N52K3
MOSFET N-CH 525V 4.4A D2PAK

MOSFET N-CH 525V 4.4A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-11091-2-ND 140349-STB5N52K3 STB5N52K3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB5N52K3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 525 volts
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