STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB50NE10L STB50NE10L

Description
Manufacturer: STMicroelectronics Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1201767-STB50NE10L Power Dissipation: 150 W Number of Pins: 3 Rise Time: 105 ns Fall Time: 45 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: D2PAK Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -65 °C Element Configuration: Single Max Operating Temperature: 175 °C Continuous Drain Current (ID): 50 A Drain to Source Breakdown Voltage: 100 V Turn-Off Delay Time: 135 ns Drain to Source Resistance: 240 mΩ Gate to Source Voltage (Vgs): 20 V
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Description
Manufacturer: STMicroelectronics Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1201767-STB50NE10L Power Dissipation: 150 W Number of Pins: 3 Rise Time: 105 ns Fall Time: 45 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: D2PAK Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -65 °C Element Configuration: Single Max Operating Temperature: 175 °C Continuous Drain Current (ID): 50 A Drain to Source Breakdown Voltage: 100 V Turn-Off Delay Time: 135 ns Drain to Source Resistance: 240 mΩ Gate to Source Voltage (Vgs): 20 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB50NE10L - 1201767-STB50NE10L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB50NE10L
1201767-STB50NE10L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB50NE10L 1201767-STB50NE10L
Manufacturer: STMicroelectronics Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1201767-STB50NE10L Power Dissipation: 150 W Number of Pins: 3 Rise Time: 105 ns Fall Time: 45 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: D2PAK Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -65 °C Element Configuration: Single Max Operating Temperature: 175 °C Continuous Drain Current (ID): 50 A Drain to Source Breakdown Voltage: 100 V Turn-Off Delay Time: 135 ns Drain to Source Resistance: 240 mΩ Gate to Source Voltage (Vgs): 20 V

Manufacturer: STMicroelectronics
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1201767-STB50NE10L
Power Dissipation: 150 W
Number of Pins: 3
Rise Time: 105 ns
Fall Time: 45 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: D2PAK
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -65 °C
Element Configuration: Single
Max Operating Temperature: 175 °C
Continuous Drain Current (ID): 50 A
Drain to Source Breakdown Voltage: 100 V
Turn-Off Delay Time: 135 ns
Drain to Source Resistance: 240 mΩ
Gate to Source Voltage (Vgs): 20 V

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1201767-STB50NE10L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB50NE10L
Package Type SOT3; D2PAK
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