STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB50NE10 STB50NE10

Manufacturer: STMicroelectronics
Win Source Part Number: 066284-STB50NE10
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 180W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 166nC @ 10V
Max Input Capacitance: 6000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 27 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): IPB47N10SL-26; STB50NE10T4; BUK7628-100A;
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

50A, 100V, 0.027ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 Product overview: STB50NE10 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 50A, 100V, 0.027ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50A, 100V, 0.027ohm, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-STB50NE10 can be used for catalog matching and distributor lookup.