Win Source Part Number: 1096707-STB47N60DM6A
Category: Discrete Semiconductor Products>Transistors
Series: *
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-18150-6,-1138-ST
Base Product Number: STB47
AUTOMOTIVE-GRADE N-CHANNEL 600 V
Surface Mount D²PAK (TO-263)
Surface Mount D²PAK (TO-263)
Surface Mount D²PAK (TO-263)
MOSFET, N-CH, 600V, 36A, 250W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.07ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
AUTOMOTIVE-GRADE N-CHANNEL 600 V
MOSFET Automotive-grade N-channel 600 V, 0.070 typ., 36 A MDmesh DM6 Power MOSFET in a D PAK package
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1096707-STB47N60DM6AG | STB47N60DM6AG | 497-STB47N60DM6AGDKR-ND | 84AC2847 | STB47N60DM6AG | STB47N60DM6AG |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, 36A, 250W, To-263; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Package Type | TO-263; SOT3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | |
| Polarity | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 600 volts | |||||
| IDSS | 36000 milliamps | 36000 milliamps |