STMicroelectronics, Inc. N-Channel 600 V 68 mOhm 36 A MOSFET Transistor STB46N60M6

N-channel 600 V, 68 mOhm typ., 36 A MDmesh M6 Power MOSFET in a D2PAK package Product overview: STB46N60M6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 68 mOhm, 36 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 68 mOhm, 36 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB46N60M6 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1278145-STB46N60M6
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101
Package: Tape & Reel (TR)
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 250W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 47 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-STB46N60M6TR
Base Product Number: STB46
Drive Voltage (Max Rds On, Min Rds On): 10V

N-Channel 600V 36A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)