MOSFET N-CH 300V 53A D2PAK
300V N-Ch MOSFET, 53A, 0.037 Ohm, D2PAK Product overview: STB46N30M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 300V, 53A, 0.037 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 300V, 53A, 0.037 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB46N30M5 can be used for catalog matching and distributor lookup.
N-Channel 300V 53A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 300V 53A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 300V 53A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: STMicroelectronics
Win Source Part Number: 1102798-STB46N30M5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 53A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 95nC @ 10V
Max Input Capacitance: 4240pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 40 mOhm @ 26.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
MOSFET, AEC-Q101, N-CH, 300V, 53A, 250W ROHS COMPLIANT: YES
MOSFET N-CH 300V 53A D2PAK
MOSFET N-channel 300 V, 0.037 Ohm typ., 53 A MDmesh M5 Power MOSFET in a D2PAK Package
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STB46N30M5 | 278-STB46N30M5 | 497-14964-6-ND | 1102798-STB46N30M5 | 69AH2677 | STB46N30M5 | STB46N30M5 |
| Product Name | Single FETs, MOSFETs | 300V 53A 0.037 Ohm MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB46N30M5 | Mosfet, Aec-Q101, N-Ch, 300V, 53A, 250W Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 300 volts | 300 volts | |||||
| IDSS | 53000 milliamps | ||||||
| PD | 250000 milliwatts | 250000 milliwatts |
