MOSFET N-CH 300V 53A D2PAK
N-Channel 300V 53A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 300V 53A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 300V 53A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: STMicroelectronics
Win Source Part Number: 1102798-STB46N30M5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 53A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 95nC @ 10V
Max Input Capacitance: 4240pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 40 mOhm @ 26.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
MOSFET, AEC-Q101, N-CH, 300V, 53A, 250W ROHS COMPLIANT: YES
MOSFET N-CH 300V 53A D2PAK
MOSFET N-channel 300 V, 0.037 Ohm typ., 53 A MDmesh M5 Power MOSFET in a D2PAK Package
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STB46N30M5 | 497-14964-1-ND | 1102798-STB46N30M5 | 69AH2677 | STB46N30M5 | STB46N30M5 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB46N30M5 | Mosfet, Aec-Q101, N-Ch, 300V, 53A, 250W Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 300 volts | 300 volts | ||||
| IDSS | 53000 milliamps | |||||
| PD | 250000 milliwatts | 250000 milliwatts |
