STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB46N30M5 STB46N30M5

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102798-STB46N30M5 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 53A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 95nC @ 10V Max Input Capacitance: 4240pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 40 mOhm @ 26.5A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB46N30M5 - 1102798-STB46N30M5 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-14964-1-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-14964-2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-14964-6-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - STB46N30M5 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB46N30M5 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, Aec-Q101, N-Ch, 300V, 53A, 250W Rohs Compliant Stmicroelectronics - 69AH2677 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102798-STB46N30M5 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 53A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 95nC @ 10V Max Input Capacitance: 4240pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 40 mOhm @ 26.5A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB46N30M5 - 1102798-STB46N30M5 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB46N30M5
1102798-STB46N30M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB46N30M5 1102798-STB46N30M5
Manufacturer: STMicroelectronics Win Source Part Number: 1102798-STB46N30M5 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 53A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 95nC @ 10V Max Input Capacitance: 4240pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 40 mOhm @ 26.5A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1102798-STB46N30M5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 53A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 95nC @ 10V
Max Input Capacitance: 4240pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 40 mOhm @ 26.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-14964-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14964-1-ND
Single FETs, MOSFETs 497-14964-1-ND
N-Channel 300V 53A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 300V 53A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 497-14964-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14964-2-ND
Single FETs, MOSFETs 497-14964-2-ND
N-Channel 300V 53A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 300V 53A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 497-14964-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14964-6-ND
Single FETs, MOSFETs 497-14964-6-ND
N-Channel 300V 53A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 300V 53A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - STB46N30M5 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STB46N30M5
Single FETs, MOSFETs STB46N30M5
MOSFET N-CH 300V 53A D2PAK

MOSFET N-CH 300V 53A D2PAK

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STB46N30M5
MOSFET STB46N30M5
MOSFET N-channel 300 V, 0.037 Ohm typ., 53 A MDmesh M5 Power MOSFET in a D2PAK Package

MOSFET N-channel 300 V, 0.037 Ohm typ., 53 A MDmesh M5 Power MOSFET in a D2PAK Package

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB46N30M5 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB46N30M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB46N30M5
MOSFET N-CH 300V 53A D2PAK

MOSFET N-CH 300V 53A D2PAK

Supplier's Site
Mosfet, Aec-Q101, N-Ch, 300V, 53A, 250W Rohs Compliant Stmicroelectronics - 69AH2677 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, N-Ch, 300V, 53A, 250W Rohs Compliant Stmicroelectronics
69AH2677
Mosfet, Aec-Q101, N-Ch, 300V, 53A, 250W Rohs Compliant Stmicroelectronics 69AH2677
MOSFET, AEC-Q101, N-CH, 300V, 53A, 250W ROHS COMPLIANT: YES

MOSFET, AEC-Q101, N-CH, 300V, 53A, 250W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1102798-STB46N30M5 497-14964-1-ND STB46N30M5 STB46N30M5 STB46N30M5 69AH2677
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB46N30M5 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Aec-Q101, N-Ch, 300V, 53A, 250W Rohs Compliant Stmicroelectronics
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 300 volts 300 volts
PD 250000 milliwatts 250000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
Package Type TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 4240 pF @ 100 V TO-3
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