STMicroelectronics, Inc. Single FETs, MOSFETs STB45N60DM6

The STB45N60DM6 is an N-channel 600 V Power MOSFET designed for high-efficiency switching applications, featuring a D²PAK package with dimensions of 10.40 mm (E) by 9.35 mm (D) and a thermal resistance junction-to-case of 0.6 °C/W. It has a maximum continuous drain current of 30 A at 25 °C, a typical on-resistance of 85 mΩ at 10 V gate bias, and a peak pulsed current of 95 A. The device includes a fast-recovery body diode with a reverse recovery charge of 0.5 µC at 30 A and 60 V, and is rated for 630 mJ single-pulse avalanche energy. It supports a peak diode recovery voltage slope of 100 V/ns and is avalanche-tested. The package meets RoHS compliance and is supplied in tape and reel.