N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in D2PAK package Product overview: STB40N60M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 0.078 Ohm, 34 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 0.078 Ohm, 34 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB40N60M2 can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 34A D2PAK
N-Channel 600V 34A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 34A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 34A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: STMicroelectronics
Win Source Part Number: 763565-STB40N60M2
Series: MDmesh II Plus
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Family Name: STB40N60M2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: D2PAK
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 57nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2500pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 250W (Tc)
Rds On (Maximum) @ Id, Vgs: 88 mOhm @ 17A, 10V
Alternative Parts (Cross-Reference): IPB60R099P7; SiHB24N65EF-GE3; IPB65R110CFDAXT; ;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2030
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
MOSFET, N-CH, 600V, 34A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:34A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-CH 600V 34A D2PAK
MOSFET N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in D2PAK package
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STB40N60M2 | STB40N60M2 | 497-14963-2-ND | 763565-STB40N60M2 | 45AC7526 | STB40N60M2 | STB40N60M2 |
| Product Name | N-Channel 600 V 0.078 Ohm 34 A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB40N60M2 | Mosfet, N-Ch, 600V, 34A, To-263; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| PD | 250000 milliwatts | 250000 milliwatts | 250000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
