Manufacturer: STMicroelectronics
Win Source Part Number: 1010195-STB37N60DM2A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 210W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 28A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 54nC @ 10V
Max Input Capacitance: 2400pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 110 mOhm @ 14A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
MOSFET N-CH 600V 28A D2PAK
600V 28A N-Ch MOSFET, D2PAK, 0.094 Ohm Product overview: STB37N60DM2AG from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 28A, 0.094 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 28A, 0.094 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB37N60DM2AG can be used for catalog matching and distributor lookup.
N-Channel 600V 28A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 28A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 28A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)
MOSFET, N-CH, 600V, 28A, TO263; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.094ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
MOSFET Automotive-grade N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET in a D2PAK package
MOSFET N-CH 600V 28A D2PAK
| Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1010195-STB37N60DM2AG | STB37N60DM2AG | 2333039P | 278-STB37N60DM2AG | 497-16105-6-ND | 04AJ4702 | STB37N60DM2AG | STB37N60DM2AG |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB37N60DM2AG | Single FETs, MOSFETs | MOSFETs | 600V 28A 0.094 Ohm MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, 28A, To263; Transistor Polarity Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||||
| V(BR)DSS | 600 volts | 600 volts | ||||||
| PD | 210000 milliwatts | 210000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | |||||
| Package Type | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
