STMicroelectronics, Inc. Single FETs, MOSFETs STB37N60DM2AG

Description
MOSFET N-CH 600V 28A D2PAK
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Description
MOSFET N-CH 600V 28A D2PAK
Request a Quote Datasheet

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Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STB37N60DM2AG - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STB37N60DM2AG
Single FETs, MOSFETs STB37N60DM2AG
MOSFET N-CH 600V 28A D2PAK

MOSFET N-CH 600V 28A D2PAK

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-16105-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-16105-6-ND
Single FETs, MOSFETs 497-16105-6-ND
N-Channel 600V 28A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 28A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)

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Single FETs, MOSFETs - 497-16105-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-16105-2-ND
Single FETs, MOSFETs 497-16105-2-ND
N-Channel 600V 28A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 28A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)

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Single FETs, MOSFETs - 497-16105-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-16105-1-ND
Single FETs, MOSFETs 497-16105-1-ND
N-Channel 600V 28A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 28A (Tc) 210W (Tc) Surface Mount D²PAK (TO-263)

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB37N60DM2AG - 1010195-STB37N60DM2AG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB37N60DM2AG
1010195-STB37N60DM2AG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB37N60DM2AG 1010195-STB37N60DM2AG
Manufacturer: STMicroelectronics Win Source Part Number: 1010195-STB37N60DM2A G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 210W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 28A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 54nC @ 10V Max Input Capacitance: 2400pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 110 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1010195-STB37N60DM2AG
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 210W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 28A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 54nC @ 10V
Max Input Capacitance: 2400pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 110 mOhm @ 14A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Corby, Northants, United Kingdom
MOSFETs
2333039
MOSFETs 2333039
ST STB37N60DM2AG

ST STB37N60DM2AG

Supplier's Site
Corby, Northants, United Kingdom
MOSFETs
2333038
MOSFETs 2333038
ST STB37N60DM2AG

ST STB37N60DM2AG

Supplier's Site
Corby, Northants, United Kingdom
MOSFETs
2333039P
MOSFETs 2333039P
ST STB37N60DM2AG

ST STB37N60DM2AG

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB37N60DM2AG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB37N60DM2AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB37N60DM2AG
MOSFET N-CH 600V 28A D2PAK

MOSFET N-CH 600V 28A D2PAK

Supplier's Site
Mosfet, N-Ch, 600V, 28A, To263; Transistor Polarity Stmicroelectronics - 04AJ4702 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 28A, To263; Transistor Polarity Stmicroelectronics
04AJ4702
Mosfet, N-Ch, 600V, 28A, To263; Transistor Polarity Stmicroelectronics 04AJ4702
MOSFET, N-CH, 600V, 28A, TO263; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.094ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 600V, 28A, TO263; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.094ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Automotive-grade N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET in a D2PAK package

MOSFET Automotive-grade N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET in a D2PAK package

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Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics RS Components, Ltd. RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number STB37N60DM2AG 497-16105-6-ND 1010195-STB37N60DM2AG 2333039 2333039P STB37N60DM2AG 04AJ4702 STB37N60DM2AG
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB37N60DM2AG MOSFETs MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 600V, 28A, To263; Transistor Polarity Stmicroelectronics MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts 600 volts
IDSS 28000 milliamps 28000 milliamps 28000 milliamps
PD 210000 milliwatts 210000 milliwatts
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