Manufacturer: STMicroelectronics
Win Source Part Number: 1325396-STB36NM60ND
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 1,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 190W (Tc)
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Vgs (Max): ±25V
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ECCN: EAR99
Fake Threat In the Open Market: 80
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 497-13861-6,497-1386
Base Product Number: STB36
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
MOSFET N-CH 600V 29A D2PAK
N-Channel 600V 29A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 29A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 29A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
POWER FIELD-EFFECT TRANSISTOR, 29A I(D), 1-ELEMENT, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 600V 29A D2PAK
MOSFET, N-CH, 600V, 29A, 150DEG C, 190W; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.097ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET Auto-grade N-CH 650V 29A FDmesh II 0.097
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Radwell International | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1325396-STB36NM60ND | STB36NM60ND | 497-13861-1-ND | 110255863 | STB36NM60ND | 26AH0137 | STB36NM60ND |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 29A, 150Deg C, 190W; Transistor Polarity Stmicroelectronics | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| PD | 190000 milliwatts | 190000 milliwatts | |||||
| TJ | 150 C (302 F) | 150 C (302 F) | |||||
| Package Type | TO-263; SOT3; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | 10V | TO-3 | ||
| Packing Method | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
