STMicroelectronics, Inc. Single FETs, MOSFETs STB35N65M5

Description
N-Channel 650V 27A (Tc) 160W (Tc) Surface Mount D2PAK
Request a Quote Datasheet
Description
N-Channel 650V 27A (Tc) 160W (Tc) Surface Mount D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-10565-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10565-1-ND
Single FETs, MOSFETs 497-10565-1-ND
N-Channel 650V 27A (Tc) 160W (Tc) Surface Mount D2PAK

N-Channel 650V 27A (Tc) 160W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-10565-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10565-6-ND
Single FETs, MOSFETs 497-10565-6-ND
N-Channel 650V 27A (Tc) 160W (Tc) Surface Mount D2PAK

N-Channel 650V 27A (Tc) 160W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-10565-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10565-2-ND
Single FETs, MOSFETs 497-10565-2-ND
N-Channel 650V 27A (Tc) 160W (Tc) Surface Mount D2PAK

N-Channel 650V 27A (Tc) 160W (Tc) Surface Mount D2PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB35N65M5 - 1005219-STB35N65M5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB35N65M5
1005219-STB35N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB35N65M5 1005219-STB35N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 1005219-STB35N65M5 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 160W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 27A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 83nC @ 10V Max Input Capacitance: 3750pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 98 mOhm @ 13.5A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1005219-STB35N65M5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 27A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 83nC @ 10V
Max Input Capacitance: 3750pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 98 mOhm @ 13.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - STB35N65M5 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STB35N65M5
Single FETs, MOSFETs STB35N65M5
MOSFET N-CH 650V 27A D2PAK

MOSFET N-CH 650V 27A D2PAK

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET POWER MOSFET N-CH 650V

MOSFET POWER MOSFET N-CH 650V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB35N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB35N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB35N65M5
MOSFET N-CH 650V 27A D2PAK

MOSFET N-CH 650V 27A D2PAK

Supplier's Site
Mosfet, N Ch, 650V, 27A, To-263; Channel Type Stmicroelectronics - 71R6974 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 650V, 27A, To-263; Channel Type Stmicroelectronics
71R6974
Mosfet, N Ch, 650V, 27A, To-263; Channel Type Stmicroelectronics 71R6974
MOSFET, N CH, 650V, 27A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:27A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N CH, 650V, 27A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:27A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-10565-1-ND 1005219-STB35N65M5 STB35N65M5 STB35N65M5 STB35N65M5 71R6974
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB35N65M5 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Ch, 650V, 27A, To-263; Channel Type Stmicroelectronics
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3; TO-263
V(BR)DSS 650 volts 650 volts
PD 160000 milliwatts 160000 milliwatts
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