Manufacturer: STMicroelectronics
Win Source Part Number: 1005219-STB35N65M5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 27A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 83nC @ 10V
Max Input Capacitance: 3750pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 98 mOhm @ 13.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
650V 27A N-Channel MOSFET D2PAK, 85mR Rds(on) Product overview: STB35N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650V, 27A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 27A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB35N65M5 can be used for catalog matching and distributor lookup.
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N-Channel 650V 27A (Tc) 160W (Tc) Surface Mount D2PAK
N-Channel 650V 27A (Tc) 160W (Tc) Surface Mount D2PAK
MOSFET N-CH 650V 27A D2PAK
MOSFET, N CH, 650V, 27A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:27A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 650V 27A D2PAK
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1005219-STB35N65M5 | 278-STB35N65M5 | 497-10565-1-ND | STB35N65M5 | STB35N65M5 | 71R6974 | STB35N65M5 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB35N65M5 | N-Channel 650V 27A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, N Ch, 650V, 27A, To-263; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 650 volts | 650 volts | |||||
| PD | 160000 milliwatts | 160000 milliwatts | 160000 milliwatts | ||||
| TJ | 150 C (302 F) | -55 C (-67 F) | 150 C (302 F) |
