600V N-Ch MOSFET, 29A, 0.092 Ohm, D2PAK, Surface Mount Product overview: STB34NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 600V, 29A, 0.092 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 600V, 29A, 0.092 Ohm, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB34NM60N can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1260645-STB34NM60N
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 250W
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 29A
Rds On (Maximum) at Id, Vgs: 105mOhm at 14.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 84nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 2722pF at 100V
N-Channel 600V 29A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 29A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 29A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 600V 29A D2PAK
MOSFET, N CH, 600V, 29A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:29A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-Ch 600V 0.092Ohm 29A MDMesh II MOS
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STB34NM60N | 1260645-STB34NM60N | 497-12236-6-ND | STB34NM60N | 87T3737 | STB34NM60N |
| Product Name | SMD 600V 29A 0.092 Ohm MOSFET Transistor | FETs - Single - STB34NM60N | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Ch, 600V, 29A, To-263; Channel Type Stmicroelectronics | MOSFET |
| PD | 210000 milliwatts | 250000 milliwatts | ||||
| TJ | -55 C (-67 F) | 150 C (302 F) | ||||
| Polarity | N-Channel; N-Channel | N-Channel | ||||
| V(BR)DSS | 600 volts |
