Manufacturer: STMicroelectronics
Win Source Part Number: 1260645-STB34NM60N
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 250W
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 29A
Rds On (Maximum) at Id, Vgs: 105mOhm at 14.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 84nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 2722pF at 100V
N-Channel 600V 29A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 29A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 29A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
MOSFET, N CH, 600V, 29A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:29A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-Ch 600V 0.092Ohm 29A MDMesh II MOS
MOSFET N-CH 600V 29A D2PAK
| Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1260645-STB34NM60N | 497-12236-6-ND | 87T3737 | STB34NM60N | STB34NM60N |
| Product Name | FETs - Single - STB34NM60N | Single FETs, MOSFETs | Mosfet, N Ch, 600V, 29A, To-263; Channel Type Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 600 volts | ||||
| PD | 250000 milliwatts | ||||
| TJ | 150 C (302 F) |
