Win Source Part Number: 1110578-STB33N60DM2
Category: Discrete Semiconductor Products>Transistors
Series: MDmesh™ DM2
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 190W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 47 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-16354-2,497-1635
Base Product Number: STB33
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 600V 24A D2PAK
N-Channel 600V 24A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 24A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 24A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
MOSFET, N-CH, 600V, 24A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package
MOSFET N-CH 600V 24A D2PAK
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1110578-STB33N60DM2 | STB33N60DM2 | 497-16354-2-ND | 79Y9447 | STB33N60DM2 | STB33N60DM2 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, 24A, To-263; Transistor Polarity Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 190000 milliwatts | 190000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | TO-263; SOT3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | |
| Transistor Technology / Material | MOSFET (Metal Oxide) |
