MOSFET N CH 200V 30A D2PAK
Win Source Part Number: 1017275-STB30NF20L
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, STripFET™
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 150W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 57 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-13392-6,497-1339
Base Product Number: STB30
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 200V 30A (Tc) 150W (Tc) Surface Mount D2PAK
N-Channel 200V 30A (Tc) 150W (Tc) Surface Mount D2PAK
N-Channel 200V 30A (Tc) 150W (Tc) Surface Mount D2PAK
MOSFET, N-CH, 200V, 30A, TO-263 ROHS COMPLIANT: YES
MOSFET N-Ch 200V 0.065 Ohm 30A STripFET 150W
MOSFET N CH 200V 30A D2PAK
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STB30NF20L | 1017275-STB30NF20L | 497-13392-2-ND | 47AK6918 | STB30NF20L | STB30NF20L |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Mosfet, N-Ch, 200V, 30A, To-263 Rohs Compliant Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 200 volts | |||||
| IDSS | 30000 milliamps | |||||
| PD | 150000 milliwatts | 150000 milliwatts |
