MOSFET N-CH 100V 35A D2PAK
Manufacturer: STMicroelectronics
Win Source Part Number: 031075-STB30NF10T4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 115W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 55nC @ 10V
Max Input Capacitance: 1180pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 45 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
100V 35A N-CH MOSFET D2PAK 38mR Low Gate Charge Product overview: STB30NF10T4 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB30NF10T4 can be used for catalog matching and distributor lookup.
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MOSFET, N CHANNEL, 100V, 35A, D2PAK; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:15A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STB30NF10T4 | 031075-STB30NF10T4 | 278-STB30NF10T4 | 6875194 | 6875194P | 497-6550-6-ND | STB30NF10T4 | STB30NF10T4 | 33R1116 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB30NF10T4 | 100V 35A MOSFET Transistor | MOSFETs | MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 100V, 35A, D2Pak; Channel Type Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 100 volts | 100 volts | |||||||
| IDSS | 35000 milliamps | 15000 milliamps | |||||||
| PD | 115000 milliwatts | 115000 milliwatts | 115000 milliwatts |
