AUTOMOTIVE-GRADE N-CHANNEL 650 V Product overview: STB30N65DM6AG from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, N-Channel, 650 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 650 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB30N65DM6AG can be used for catalog matching and distributor lookup.
N-Channel 650V 28A (Tc) 223W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 650V 28A (Tc) 223W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 650V 28A (Tc) 223W (Tc) Surface Mount D²PAK (TO-263)
Win Source Part Number: 1339686-STB30N65DM6A
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: Automotive, AEC-Q101, MDmesh™ DM2
Package: Tape & Reel
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Power Dissipation (Max): 223W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB
Supplier Device Package: D2PAK (TO-263)
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 40 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
AUTOMOTIVE-GRADE N-CHANNEL 650 V
MOSFET, N-CH, 650V, 28A, TO-263 ROHS COMPLIANT: YES
AUTOMOTIVE-GRADE N-CHANNEL 650 V
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-STB30N65DM6AG | 497-STB30N65DM6AGCT-ND | 1339686-STB30N65DM6AG | STB30N65DM6AG | 69AJ1062 | STB30N65DM6AG |
| Product Name | Automotive N-Channel 650 V MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 28A, To-263 Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 650 volts | 650 volts | ||||
| PD | 223 milliwatts | 223000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
