MOSFET N-CH 500V 21A D2PAK
Manufacturer: STMicroelectronics
Win Source Part Number: 066281-STB28NM50N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 21A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 1735pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 158 mOhm @ 10.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
N-Channel 500V 21A (Tc) 150W (Tc) Surface Mount D2PAK
N-Channel 500V 21A (Tc) 150W (Tc) Surface Mount D2PAK
N-Channel 500V 21A (Tc) 150W (Tc) Surface Mount D2PAK
MOSFET N-Ch 500V 0.135 21A MDmesh II
MOSFET, N CHANNEL, 500V, 21A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:21A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-CH 500V 21A D2PAK
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STB28NM50N | 066281-STB28NM50N | 497-STB28NM50NCT-ND | STB28NM50N | 90R9201 | STB28NM50N |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB28NM50N | Single FETs, MOSFETs | MOSFET | Mosfet, N Channel, 500V, 21A, To-263; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 500 volts | 500 volts | ||||
| IDSS | 21000 milliamps | 21000 milliamps |
