650V 20A N-Ch MOSFET D2PAK Product overview: STB28N65M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB28N65M2 can be used for catalog matching and distributor lookup.
N-Channel 650V 20A (Tc) 170W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 650V 20A (Tc) 170W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 650V 20A (Tc) 170W (Tc) Surface Mount D²PAK (TO-263)
Win Source Part Number: 1166260-STB28N65M2
Category: Discrete Semiconductor Products>Transistors
Series: MDmesh™ M2
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-15456-6,497-1545
Base Product Number: STB28
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 650V 20A D2PAK
MOSFET N-CH 650V 20A D2PAK
MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in D2PAK package
MOSFET, N-CH, 650V, 20A, 170W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STB28N65M2 | 497-15456-2-ND | 1166260-STB28N65M2 | STB28N65M2 | STB28N65M2 | STB28N65M2 | 07AH6948 |
| Product Name | 650V 20A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 650V, 20A, 170W, To-263; Transistor Polarity Stmicroelectronics |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 35 nC @ 10 V | TO-3; TO-263; TO-252 (DPAK) | ||
| PD | 170000 milliwatts | 170000 milliwatts | |||||
| TJ | 150 C (302 F) | 150 C (302 F) | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
