N-Channel 600V 21A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: STMicroelectronics
Win Source Part Number: 1102786-STB26NM60ND
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Family Name: STB26NM60ND
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 21A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 54.6nC @ 10V
Max Input Capacitance: 1817pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 175 mOhm @ 10.5A, 10V
Alternative Parts (Cross-Reference): IPB60R199CPAATMA1; IPB60R199CPAXT; FCB20N60-F085; R6524ENJTL;
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
MOSFET N-CH 600V 21A D2PAK
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 497-14264-2-ND | 1102786-STB26NM60ND | STB26NM60ND |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB26NM60ND | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | |
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| V(BR)DSS | 600 volts |
