STMicroelectronics, Inc. SMD 600V 21A MOSFET Transistor STB26NM60ND

600V N-CH MOSFET, 21A, 145mR, TO-263, Surface Mount Product overview: STB26NM60ND from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 600V, 21A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 600V, 21A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB26NM60ND can be used for catalog matching and distributor lookup.

N-Channel 600V 21A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

Manufacturer: STMicroelectronics
Win Source Part Number: 1102786-STB26NM60ND
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Family Name: STB26NM60ND
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 21A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 54.6nC @ 10V
Max Input Capacitance: 1817pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 175 mOhm @ 10.5A, 10V
Alternative Parts (Cross-Reference): IPB60R199CPAATMA1; IPB60R199CPAXT; FCB20N60-F085; R6524ENJTL;
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance