STMicroelectronics, Inc. Single FETs, MOSFETs STB26NM60ND

Description
N-Channel 600V 21A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
N-Channel 600V 21A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-14264-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14264-2-ND
Single FETs, MOSFETs 497-14264-2-ND
N-Channel 600V 21A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 21A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB26NM60ND - 1102786-STB26NM60ND - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB26NM60ND
1102786-STB26NM60ND
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB26NM60ND 1102786-STB26NM60ND
Manufacturer: STMicroelectronics Win Source Part Number: 1102786-STB26NM60ND Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Family Name: STB26NM60ND Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 21A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 54.6nC @ 10V Max Input Capacitance: 1817pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 175 mOhm @ 10.5A, 10V Alternative Parts (Cross-Reference): IPB60R199CPAATMA1; IPB60R199CPAXT; FCB20N60-F085; R6524ENJTL; ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1102786-STB26NM60ND
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Family Name: STB26NM60ND
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 21A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 54.6nC @ 10V
Max Input Capacitance: 1817pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 175 mOhm @ 10.5A, 10V
Alternative Parts (Cross-Reference): IPB60R199CPAATMA1; IPB60R199CPAXT; FCB20N60-F085; R6524ENJTL;
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
SMD 600V 21A MOSFET Transistor
278-STB26NM60ND
SMD 600V 21A MOSFET Transistor 278-STB26NM60ND
600V N-CH MOSFET, 21A, 145mR, TO-263, Surface Mount Product overview: STB26NM60ND from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 600V, 21A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 600V, 21A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB26NM60ND can be used for catalog matching and distributor lookup.

600V N-CH MOSFET, 21A, 145mR, TO-263, Surface Mount Product overview: STB26NM60ND from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 600V, 21A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 600V, 21A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB26NM60ND can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB26NM60ND - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB26NM60ND
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB26NM60ND
MOSFET N-CH 600V 21A D2PAK

MOSFET N-CH 600V 21A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-14264-2-ND 1102786-STB26NM60ND 278-STB26NM60ND STB26NM60ND
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB26NM60ND SMD 600V 21A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 600 volts
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