N-Channel 600V 20A (Tc) 140W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 20A (Tc) 140W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 20A (Tc) 140W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: STMicroelectronics
Win Source Part Number: 1102785-STB26NM60N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 140W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 1800pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 165 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient
600V 20A N-CH Power MOSFET D2PAK SMT Product overview: STB26NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB26NM60N can be used for catalog matching and distributor lookup.
MOSFET, N CHANNEL, 600V, 20A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-CH 600V 20A D2PAK
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 497-10985-2-ND | 1102785-STB26NM60N | 278-STB26NM60N | 71R6971 | STB26NM60N | STB26NM60N |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB26NM60N | 600V 20A MOSFET Transistor | Mosfet, N Channel, 600V, 20A, To-263; Channel Type Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-3; TO-263 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | ||
| V(BR)DSS | 600 volts | 600 volts | ||||
| PD | 140000 milliwatts | 140000 milliwatts |
