Manufacturer: STMicroelectronics
Win Source Part Number: 935240-STB26N60M2
Series: MDmesh™ M2
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 20A (Tc) 169W (Tc) Surface Mount D²PAK
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Reel - TR
Mounting: Surface Mount
Family Name: STB26
Categories: Discrete Semiconductor Products
Case / Package: D2PAK
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 37 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 497-17546-6, 497-17546-1, 497-17546-2
MOSFET N-CHANNEL 600V 20A D2PAK
N-Channel 600V 20A (Tc) 169W (Tc) Surface Mount D²PAK
N-Channel 600V 20A (Tc) 169W (Tc) Surface Mount D²PAK
N-Channel 600V 20A (Tc) 169W (Tc) Surface Mount D²PAK
MOSFET, N-CH, 600V, 20A, 150DEG C, 169W; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CHANNEL 600V 20A D2PAK
MOSFET N-Ch 600V 0.14 Ohm 20A M2 Power
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 935240-STB26N60M2 | STB26N60M2 | 497-17546-2-ND | 26AH0136 | STB26N60M2 | STB26N60M2 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB26N60M2 | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, 20A, 150Deg C, 169W; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; D2PAK | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-252 (DPAK) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 600 volts |
