STMicroelectronics, Inc. Single FETs, MOSFETs STB25NM60ND

Description
N-Channel 600V 21A (Tc) 160W (Tc) Surface Mount D2PAK
Request a Quote Datasheet
Description
N-Channel 600V 21A (Tc) 160W (Tc) Surface Mount D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-8473-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-8473-2-ND
Single FETs, MOSFETs 497-8473-2-ND
N-Channel 600V 21A (Tc) 160W (Tc) Surface Mount D2PAK

N-Channel 600V 21A (Tc) 160W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - STB25NM60ND - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STB25NM60ND
Single FETs, MOSFETs STB25NM60ND
MOSFET N-CH 600V 21A D2PAK

MOSFET N-CH 600V 21A D2PAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB25NM60ND - 010650-STB25NM60ND - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB25NM60ND
010650-STB25NM60ND
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB25NM60ND 010650-STB25NM60ND
Manufacturer: STMicroelectronics Win Source Part Number: 010650-STB25NM60ND Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 160W (Tc) Family Name: STB25NM60ND Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 21A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 80nC @ 10V Max Input Capacitance: 2400pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 160 mOhm @ 10.5A, 10V Alternative Parts (Cross-Reference): R6524KNJTL; R6520ENJTL; IPB65R190CFDAATMA1 ; IPB50R140CP; Introduction Date: November 15, 2007 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: STMicroelectronics
Win Source Part Number: 010650-STB25NM60ND
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Family Name: STB25NM60ND
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 21A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 2400pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 160 mOhm @ 10.5A, 10V
Alternative Parts (Cross-Reference): R6524KNJTL; R6520ENJTL; IPB65R190CFDAATMA1 ; IPB50R140CP;
Introduction Date: November 15, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-channel 600V, 21A FDMesh II

MOSFET N-channel 600V, 21A FDMesh II

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB25NM60ND - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB25NM60ND
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB25NM60ND
MOSFET N-CH 600V 21A D2PAK

MOSFET N-CH 600V 21A D2PAK

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-8473-2-ND STB25NM60ND 010650-STB25NM60ND STB25NM60ND STB25NM60ND
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB25NM60ND MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
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