STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB25NM60ND STB25NM60ND

Manufacturer: STMicroelectronics
Win Source Part Number: 010650-STB25NM60ND
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Family Name: STB25NM60ND
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 21A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 2400pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 160 mOhm @ 10.5A, 10V
Alternative Parts (Cross-Reference): R6524KNJTL; R6520ENJTL; IPB65R190CFDAATMA1 ; IPB50R140CP;
Introduction Date: November 15, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

N-Channel 600V 21A (Tc) 160W (Tc) Surface Mount D2PAK

MOSFET N-CH 600V 21A D2PAK