STMicroelectronics, Inc. 600V 21A MOSFET Transistor STB25NM60ND

600V 21A N-CH MOSFET D2PAK, 160mR RdsOn Product overview: STB25NM60ND from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 21A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 21A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB25NM60ND can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 21A D2PAK

N-Channel 600V 21A (Tc) 160W (Tc) Surface Mount D2PAK

Manufacturer: STMicroelectronics
Win Source Part Number: 010650-STB25NM60ND
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Family Name: STB25NM60ND
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 21A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 2400pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 160 mOhm @ 10.5A, 10V
Alternative Parts (Cross-Reference): R6524KNJTL; R6520ENJTL; IPB65R190CFDAATMA1 ; IPB50R140CP;
Introduction Date: November 15, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs