STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB24NM60N STB24NM60N

Description
Manufacturer: STMicroelectronics Win Source Part Number: 131379-STB24NM60N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Family Name: STB24NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 1400pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 190 mOhm @ 8A, 10V Alternative Parts (Cross-Reference): D3S190N65E-T; SIHB22N60EF-GE3; SPB20N60C3; SPB20N60C3ATMA1; Introduction Date: February 23, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2030 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 131379-STB24NM60N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Family Name: STB24NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 1400pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 190 mOhm @ 8A, 10V Alternative Parts (Cross-Reference): D3S190N65E-T; SIHB22N60EF-GE3; SPB20N60C3; SPB20N60C3ATMA1; Introduction Date: February 23, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2030 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB24NM60N - 131379-STB24NM60N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB24NM60N
131379-STB24NM60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB24NM60N 131379-STB24NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 131379-STB24NM60N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Family Name: STB24NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 1400pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 190 mOhm @ 8A, 10V Alternative Parts (Cross-Reference): D3S190N65E-T; SIHB22N60EF-GE3; SPB20N60C3; SPB20N60C3ATMA1; Introduction Date: February 23, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2030 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 131379-STB24NM60N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Family Name: STB24NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 46nC @ 10V
Max Input Capacitance: 1400pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 190 mOhm @ 8A, 10V
Alternative Parts (Cross-Reference): D3S190N65E-T; SIHB22N60EF-GE3; SPB20N60C3; SPB20N60C3ATMA1;
Introduction Date: February 23, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2030
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-11211-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-11211-6-ND
Single FETs, MOSFETs 497-11211-6-ND
N-Channel 600V 17A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 17A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 497-11211-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-11211-2-ND
Single FETs, MOSFETs 497-11211-2-ND
N-Channel 600V 17A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 17A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 497-11211-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-11211-1-ND
Single FETs, MOSFETs 497-11211-1-ND
N-Channel 600V 17A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 17A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
MOSFETs - 7609499P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7609499P
MOSFETs 7609499P
MOSFET N-Channel 650V 17A D2PAK

MOSFET N-Channel 650V 17A D2PAK

Supplier's Site
MOSFETs - 7609499 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7609499
MOSFETs 7609499
MOSFET N-Channel 650V 17A D2PAK

MOSFET N-Channel 650V 17A D2PAK

Supplier's Site
MOSFETs - 1687458 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1687458
MOSFETs 1687458
MOSFET N-Channel 650V 17A D2PAK

MOSFET N-Channel 650V 17A D2PAK

Supplier's Site
Mosfet, N Ch, 600V, 17A, To-263; Channel Type Stmicroelectronics - 47T9193 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 600V, 17A, To-263; Channel Type Stmicroelectronics
47T9193
Mosfet, N Ch, 600V, 17A, To-263; Channel Type Stmicroelectronics 47T9193
MOSFET, N CH, 600V, 17A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:17A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, N CH, 600V, 17A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:17A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II

MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB24NM60N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB24NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB24NM60N
MOSFET N-CH 600V 17A D2PAK

MOSFET N-CH 600V 17A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey RS Components, Ltd. RS Components, Ltd. Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 131379-STB24NM60N 497-11211-6-ND 7609499P 7609499 47T9193 STB24NM60N STB24NM60N
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB24NM60N Single FETs, MOSFETs MOSFETs MOSFETs Mosfet, N Ch, 600V, 17A, To-263; Channel Type Stmicroelectronics MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 600 volts
PD 125000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Package Type TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263 TO-263; D2pak (to-263) TO-3; TO-263 10V
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