MOSFET N-CH 600V D2PAK
Win Source Part Number: 1278055-STB24N60M6
Category: Discrete Semiconductor Products>Transistors
Series: MDmesh™ M6
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 130W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-18243-1,497-1824
Base Product Number: STB24
Drive Voltage (Max Rds On, Min Rds On): 10V
N-channel 600 V, 162 mOhm typ., 17 A MDmesh M6 Power MOSFET in a D2PAK package Product overview: STB24N60M6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 162 mOhm, 17 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 162 mOhm, 17 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB24N60M6 can be used for catalog matching and distributor lookup.
N-Channel 600V 17A (Tc) 130W (Tc) Surface Mount D²PAK
N-Channel 600V 17A (Tc) 130W (Tc) Surface Mount D²PAK
N-Channel 600V 17A (Tc) 130W (Tc) Surface Mount D²PAK
MOSFET, N-CH, 600V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:-; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.19ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:-; RoHS Compliant: Yes
MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a D2PAK package
MOSFET N-CH 600V D2PAK
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STB24N60M6 | 1278055-STB24N60M6 | 278-STB24N60M6 | 497-18243-2-ND | 84AC2846 | STB24N60M6 | STB24N60M6 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | N-Channel 600 V 162 mOhm 17 A MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, To-263; Transistor Polarity Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 600 volts | ||||||
| IDSS | 17000 milliamps | ||||||
| PD | 130000 milliwatts |
