Manufacturer: STMicroelectronics
Win Source Part Number: 031073-STB24N60M2
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1060pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 190 mOhm @ 9A, 10V
Alternative Parts (Cross-Reference): TK14G65W5; STB28N60M2; STB20NM60D;
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
N-Channel 600V 18A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 18A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 18A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263)
600V 18A N-CH MOSFET D2PAK 190mR Rds(on) Product overview: STB24N60M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB24N60M2 can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 18A D2PAK
MOSFET, N-CH, 600V, 18A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.168ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power DissipationRoHS Compliant: Yes
MOSFET N-CH 600V 18A D2PAK
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 031073-STB24N60M2 | 497-13575-2-ND | 278-STB24N60M2 | STB24N60M2 | 51AC9538 | STB24N60M2 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB24N60M2 | Single FETs, MOSFETs | 600V 18A MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, 18A, To-262; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 600 volts | 600 volts | ||||
| PD | 150000 milliwatts | 150000 milliwatts | 150000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
