STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB23NM60ND STB23NM60ND

Manufacturer: STMicroelectronics
Win Source Part Number: 031072-STB23NM60ND
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Family Name: STB23NM60ND
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 19.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 2050pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 180 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): R6524KNJTL; AOB15S65; IPB65R225C7A;
Introduction Date: January 22, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

600V 19.5A N-CH MOSFET D2PAK 180mR Product overview: STB23NM60ND from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 19.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 19.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB23NM60ND can be used for catalog matching and distributor lookup.

N-Channel 600V 19.5A (Tc) 150W (Tc) Surface Mount D2PAK