STMicroelectronics, Inc. Single FETs, MOSFETs STB23NM60ND

Description
N-Channel 600V 19.5A (Tc) 150W (Tc) Surface Mount D2PAK
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Description
N-Channel 600V 19.5A (Tc) 150W (Tc) Surface Mount D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
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Single FETs, MOSFETs - 497-8472-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-8472-2-ND
Single FETs, MOSFETs 497-8472-2-ND
N-Channel 600V 19.5A (Tc) 150W (Tc) Surface Mount D2PAK

N-Channel 600V 19.5A (Tc) 150W (Tc) Surface Mount D2PAK

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB23NM60ND - 031072-STB23NM60ND - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB23NM60ND
031072-STB23NM60ND
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB23NM60ND 031072-STB23NM60ND
Manufacturer: STMicroelectronics Win Source Part Number: 031072-STB23NM60ND Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Family Name: STB23NM60ND Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 19.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 2050pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 180 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): R6524KNJTL; AOB15S65; IPB65R225C7A; Introduction Date: January 22, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: STMicroelectronics
Win Source Part Number: 031072-STB23NM60ND
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Family Name: STB23NM60ND
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 19.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 2050pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 180 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): R6524KNJTL; AOB15S65; IPB65R225C7A;
Introduction Date: January 22, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Singapore
600V 19.5A MOSFET Transistor
278-STB23NM60ND
600V 19.5A MOSFET Transistor 278-STB23NM60ND
600V 19.5A N-CH MOSFET D2PAK 180mR Product overview: STB23NM60ND from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 19.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 19.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB23NM60ND can be used for catalog matching and distributor lookup.

600V 19.5A N-CH MOSFET D2PAK 180mR Product overview: STB23NM60ND from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 19.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 19.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB23NM60ND can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB23NM60ND - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB23NM60ND
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB23NM60ND
MOSFET N-CH 600V 19.5A D2PAK

MOSFET N-CH 600V 19.5A D2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 600V 0.150 Ohm 19.5A FDmesh II MOS

MOSFET N-CH 600V 0.150 Ohm 19.5A FDmesh II MOS

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Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-8472-2-ND 031072-STB23NM60ND 278-STB23NM60ND STB23NM60ND STB23NM60ND
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB23NM60ND 600V 19.5A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 600 volts
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