Manufacturer: STMicroelectronics
Win Source Part Number: 005493-STB22NM60N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 4V @ 100μA
Max Gate Charge: 44nC @ 10V
Max Input Capacitance: 1300pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 220 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
N-Channel 600V 16A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 600V 16A D2PAK
MOSFET N-channel 600 V 0.190 ohm 16A Mdmesh
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 005493-STB22NM60N | 497-10298-2-ND | STB22NM60N | STB22NM60N |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB22NM60N | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 600 volts | |||
| PD | 125000 milliwatts |
