STMicroelectronics, Inc. Single FETs, MOSFETs STB21NM60N

Description
N-Channel 600V 17A (Tc) 140W (Tc) Surface Mount D2PAK
Request a Quote Datasheet
Description
N-Channel 600V 17A (Tc) 140W (Tc) Surface Mount D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-5002-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-5002-2-ND
Single FETs, MOSFETs 497-5002-2-ND
N-Channel 600V 17A (Tc) 140W (Tc) Surface Mount D2PAK

N-Channel 600V 17A (Tc) 140W (Tc) Surface Mount D2PAK

Buy Now Datasheet
FETs - Single - STB21NM60N - 1260626-STB21NM60N - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STB21NM60N
1260626-STB21NM60N
FETs - Single - STB21NM60N 1260626-STB21NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 1260626-STB21NM60N Packaging: Cut Tape (CT) Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 140W Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 17A Rds On (Maximum) at Id, Vgs: 220mOhm at 8.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 66nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1900pF at 50V

Manufacturer: STMicroelectronics
Win Source Part Number: 1260626-STB21NM60N
Packaging: Cut Tape (CT)
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 140W
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 17A
Rds On (Maximum) at Id, Vgs: 220mOhm at 8.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 66nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 1900pF at 50V

Buy Now
Singapore, Singapore
600V 17A MOSFET Transistor
278-STB21NM60N
600V 17A MOSFET Transistor 278-STB21NM60N
600V 17A N-CH MOSFET D2PAK 220mR Product overview: STB21NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 17A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB21NM60N can be used for catalog matching and distributor lookup.

600V 17A N-CH MOSFET D2PAK 220mR Product overview: STB21NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 17A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB21NM60N can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB21NM60N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB21NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB21NM60N
MOSFET N-CH 600V 17A D2PAK

MOSFET N-CH 600V 17A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-5002-2-ND 1260626-STB21NM60N 278-STB21NM60N STB21NM60N
Product Name Single FETs, MOSFETs FETs - Single - STB21NM60N 600V 17A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-220; TO-247; TO-263; SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 600 volts
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