STMicroelectronics, Inc. FETs - Single - STB21NM50N STB21NM50N

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260625-STB21NM50N Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 140W Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 18A Rds On (Maximum) at Id, Vgs: 190mOhm at 9A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 65nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1950pF at 25V
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260625-STB21NM50N Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 140W Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 18A Rds On (Maximum) at Id, Vgs: 190mOhm at 9A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 65nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1950pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STB21NM50N - 1260625-STB21NM50N - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STB21NM50N
1260625-STB21NM50N
FETs - Single - STB21NM50N 1260625-STB21NM50N
Manufacturer: STMicroelectronics Win Source Part Number: 1260625-STB21NM50N Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 140W Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 18A Rds On (Maximum) at Id, Vgs: 190mOhm at 9A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 65nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1950pF at 25V

Manufacturer: STMicroelectronics
Win Source Part Number: 1260625-STB21NM50N
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 140W
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 18A
Rds On (Maximum) at Id, Vgs: 190mOhm at 9A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 65nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 1950pF at 25V

Buy Now
Single FETs, MOSFETs - 497-5783-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-5783-2-ND
Single FETs, MOSFETs 497-5783-2-ND
N-Channel 500V 18A (Tc) 140W (Tc) Surface Mount D2PAK

N-Channel 500V 18A (Tc) 140W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB21NM50N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB21NM50N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB21NM50N
MOSFET N-CH 500V 18A D2PAK

MOSFET N-CH 500V 18A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1260625-STB21NM50N 497-5783-2-ND STB21NM50N
Product Name FETs - Single - STB21NM50N Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts
PD 140000 milliwatts
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