Manufacturer: STMicroelectronics
Win Source Part Number: 1102781-STB21NM50N-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 140W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 65nC @ 10V
Max Input Capacitance: 1950pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 190 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient
N-Channel 500V 18A (Tc) 140W (Tc) Through Hole I2PAK
MOSFET N-CH 500V 18A I2PAK
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1102781-STB21NM50N-1 | 497-5727-ND | STB21NM50N-1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB21NM50N-1 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 500 volts | ||
| PD | 140000 milliwatts |
