Manufacturer: STMicroelectronics
Win Source Part Number: 212257-STB20NM50-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 192W (Tc)
Family Name: STB20NM50
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 550V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 56nC @ 10V
Max Input Capacitance: 1480pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 250 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): IPI50R250CPXKSA1 ; IPI50R250CPXK; IPI50R299CPXK; IPI50R299CPXKSA1;
Introduction Date: November 30, 2001
ECCN: EAR99
Country of Origin: China, India
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
N-Channel 550V 20A (Tc) 192W (Tc) Through Hole I2PAK
MOSFET N-CH 550V 20A I2PAK
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 212257-STB20NM50-1 | 497-5382-5-ND | STB20NM50-1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB20NM50-1 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 550 volts | ||
| PD | 192000 milliwatts |
