STMicroelectronics, Inc. Single FETs, MOSFETs STB20NM50-1

Description
N-Channel 550V 20A (Tc) 192W (Tc) Through Hole I2PAK
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Description
N-Channel 550V 20A (Tc) 192W (Tc) Through Hole I2PAK
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - 497-5382-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-5382-5-ND
Single FETs, MOSFETs 497-5382-5-ND
N-Channel 550V 20A (Tc) 192W (Tc) Through Hole I2PAK

N-Channel 550V 20A (Tc) 192W (Tc) Through Hole I2PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB20NM50-1 - 212257-STB20NM50-1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB20NM50-1
212257-STB20NM50-1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB20NM50-1 212257-STB20NM50-1
Manufacturer: STMicroelectronics Win Source Part Number: 212257-STB20NM50-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 192W (Tc) Family Name: STB20NM50 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 550V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 56nC @ 10V Max Input Capacitance: 1480pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 250 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): IPI50R250CPXKSA1 ; IPI50R250CPXK; IPI50R299CPXK; IPI50R299CPXKSA1; Introduction Date: November 30, 2001 ECCN: EAR99 Country of Origin: China, India Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 212257-STB20NM50-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 192W (Tc)
Family Name: STB20NM50
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 550V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 56nC @ 10V
Max Input Capacitance: 1480pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 250 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): IPI50R250CPXKSA1 ; IPI50R250CPXK; IPI50R299CPXK; IPI50R299CPXKSA1;
Introduction Date: November 30, 2001
ECCN: EAR99
Country of Origin: China, India
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB20NM50-1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB20NM50-1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB20NM50-1
MOSFET N-CH 550V 20A I2PAK

MOSFET N-CH 550V 20A I2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-5382-5-ND 212257-STB20NM50-1 STB20NM50-1
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB20NM50-1 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA SOT3; I2PAK TO-262-3 Long Leads, I2PAK, TO-262AA
V(BR)DSS 550 volts
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