Manufacturer: STMicroelectronics
Win Source Part Number: 212256-STB200NF04-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 310W (Tc)
Family Name: STB200NF04-1
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 210nC @ 10V
Max Input Capacitance: 5100pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.7 mOhm @ 90A, 10V
Alternative Parts (Cross-Reference): IPI80N04S204AKSA1; BUK9E4R4-40B,127; IRF1404ZLPBF;
Introduction Date: December 10, 2003
ECCN: EAR99
Country of Origin: China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
120A, 40V, 0.0037ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3 Product overview: STB200NF04-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 120A, 40V, 0.0037ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 120A, 40V, 0.0037ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB200NF04-1 can be used for catalog matching and distributor lookup.
N-Channel 40V 120A (Tc) 310W (Tc) Through Hole I2PAK
MOSFET N-CH 40V 120A I2PAK
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 212256-STB200NF04-1 | 278-STB200NF04-1 | 497-3512-5-ND | STB200NF04-1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB200NF04-1 | N-Channel 120A 40V 0.0037ohm MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 40 volts | |||
| PD | 310000 milliwatts | 310000 milliwatts |