STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB200NF04-1 STB200NF04-1

Description
Manufacturer: STMicroelectronics Win Source Part Number: 212256-STB200NF04-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 310W (Tc) Family Name: STB200NF04-1 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 210nC @ 10V Max Input Capacitance: 5100pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.7 mOhm @ 90A, 10V Alternative Parts (Cross-Reference): IPI80N04S204AKSA1; BUK9E4R4-40B,127; IRF1404ZLPBF; Introduction Date: December 10, 2003 ECCN: EAR99 Country of Origin: China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore Estimated EOL Date: Obsolete Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 212256-STB200NF04-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 310W (Tc) Family Name: STB200NF04-1 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 210nC @ 10V Max Input Capacitance: 5100pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.7 mOhm @ 90A, 10V Alternative Parts (Cross-Reference): IPI80N04S204AKSA1; BUK9E4R4-40B,127; IRF1404ZLPBF; Introduction Date: December 10, 2003 ECCN: EAR99 Country of Origin: China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore Estimated EOL Date: Obsolete Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB200NF04-1 - 212256-STB200NF04-1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB200NF04-1
212256-STB200NF04-1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB200NF04-1 212256-STB200NF04-1
Manufacturer: STMicroelectronics Win Source Part Number: 212256-STB200NF04-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 310W (Tc) Family Name: STB200NF04-1 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 210nC @ 10V Max Input Capacitance: 5100pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.7 mOhm @ 90A, 10V Alternative Parts (Cross-Reference): IPI80N04S204AKSA1; BUK9E4R4-40B,127; IRF1404ZLPBF; Introduction Date: December 10, 2003 ECCN: EAR99 Country of Origin: China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore Estimated EOL Date: Obsolete Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 212256-STB200NF04-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 310W (Tc)
Family Name: STB200NF04-1
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 210nC @ 10V
Max Input Capacitance: 5100pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.7 mOhm @ 90A, 10V
Alternative Parts (Cross-Reference): IPI80N04S204AKSA1; BUK9E4R4-40B,127; IRF1404ZLPBF;
Introduction Date: December 10, 2003
ECCN: EAR99
Country of Origin: China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
N-Channel 120A 40V 0.0037ohm MOSFET Transistor
278-STB200NF04-1
N-Channel 120A 40V 0.0037ohm MOSFET Transistor 278-STB200NF04-1
120A, 40V, 0.0037ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3 Product overview: STB200NF04-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 120A, 40V, 0.0037ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 120A, 40V, 0.0037ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB200NF04-1 can be used for catalog matching and distributor lookup.

120A, 40V, 0.0037ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3 Product overview: STB200NF04-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 120A, 40V, 0.0037ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 120A, 40V, 0.0037ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB200NF04-1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-3512-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-3512-5-ND
Single FETs, MOSFETs 497-3512-5-ND
N-Channel 40V 120A (Tc) 310W (Tc) Through Hole I2PAK

N-Channel 40V 120A (Tc) 310W (Tc) Through Hole I2PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB200NF04-1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB200NF04-1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB200NF04-1
MOSFET N-CH 40V 120A I2PAK

MOSFET N-CH 40V 120A I2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 212256-STB200NF04-1 278-STB200NF04-1 497-3512-5-ND STB200NF04-1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB200NF04-1 N-Channel 120A 40V 0.0037ohm MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 40 volts
PD 310000 milliwatts 310000 milliwatts
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