MOSFET N-CH 800V 17A D2PAK
800V N-CH MOSFET, 17A, 295mR Rds On, D2PAK Product overview: STB18NM80 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 17A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB18NM80 can be used for catalog matching and distributor lookup.
N-Channel 800V 17A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 800V 17A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 800V 17A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: STMicroelectronics
Win Source Part Number: 099237-STB18NM80
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 2070pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 295 mOhm @ 8.5A, 10V
Alternative Parts (Cross-Reference): SPB17N80C3; FCB290N80; STB11NM80;
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient
MOSFET, N CHANNEL, 800V, 17A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:17A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 800V 17A D2PAK
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STB18NM80 | 278-STB18NM80 | 7610392 | 7610392P | 497-10117-1-ND | 099237-STB18NM80 | 55R6910 | STB18NM80 | STB18NM80 |
| Product Name | Single FETs, MOSFETs | 800V 17A MOSFET Transistor | MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB18NM80 | Mosfet, N Channel, 800V, 17A, To-263; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 800 volts | 800 volts | |||||||
| IDSS | 17000 milliamps | 17000 milliamps | |||||||
| PD | 190000 milliwatts | 190000 milliwatts | 190000 milliwatts |
