STMicroelectronics, Inc. Single FETs, MOSFETs STB18N60M6

Description
MOSFET N-CH 600V 13A D2PAK
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Description
MOSFET N-CH 600V 13A D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STB18N60M6 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STB18N60M6
Single FETs, MOSFETs STB18N60M6
MOSFET N-CH 600V 13A D2PAK

MOSFET N-CH 600V 13A D2PAK

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-19056-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-19056-2-ND
Single FETs, MOSFETs 497-19056-2-ND
N-Channel 600V 13A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 13A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)

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Single FETs, MOSFETs - 497-19056-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-19056-6-ND
Single FETs, MOSFETs 497-19056-6-ND
N-Channel 600V 13A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 13A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)

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Single FETs, MOSFETs - 497-19056-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-19056-1-ND
Single FETs, MOSFETs 497-19056-1-ND
N-Channel 600V 13A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 13A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278054-STB18N60M6 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1278054-STB18N60M6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1278054-STB18N60M6
Win Source Part Number: 1278054-STB18N60M6 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ M6 Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 110W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK (TO-263) Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 73 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-19056-1,497-1905 6-2,497-19056-6 Base Product Number: STB18 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1278054-STB18N60M6
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: MDmesh™ M6
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 110W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 73 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-19056-1,497-19056-2,497-19056-6
Base Product Number: STB18
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Singapore
N-Channel 600 V 230 mOhm 13 A MOSFET Transistor
278-STB18N60M6
N-Channel 600 V 230 mOhm 13 A MOSFET Transistor 278-STB18N60M6
N-channel 600 V, 230 mOhm typ., 13 A MDmesh M6 Power MOSFET in a D2PAK package Product overview: STB18N60M6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 230 mOhm, 13 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 230 mOhm, 13 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB18N60M6 can be used for catalog matching and distributor lookup.

N-channel 600 V, 230 mOhm typ., 13 A MDmesh M6 Power MOSFET in a D2PAK package Product overview: STB18N60M6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 230 mOhm, 13 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 230 mOhm, 13 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB18N60M6 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB18N60M6 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB18N60M6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB18N60M6
MOSFET N-CH 600V 13A D2PAK

MOSFET N-CH 600V 13A D2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a D2PAK package

MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a D2PAK package

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Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number STB18N60M6 497-19056-2-ND 1278054-STB18N60M6 278-STB18N60M6 STB18N60M6 STB18N60M6
Product Name Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single N-Channel 600 V 230 mOhm 13 A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts
IDSS 13000 milliamps
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