N-Channel 600V 13A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 13A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 13A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)
N-channel 600 V, 230 mOhm typ., 13 A MDmesh M6 Power MOSFET in a D2PAK package Product overview: STB18N60M6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 230 mOhm, 13 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 230 mOhm, 13 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB18N60M6 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1278054-STB18N60M6
Category: Discrete Semiconductor Products>Transistors
Series: MDmesh™ M6
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 110W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 73 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-19056-1,497-1905
Base Product Number: STB18
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 600V 13A D2PAK
MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a D2PAK package
MOSFET N-CH 600V 13A D2PAK
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 497-19056-2-ND | 278-STB18N60M6 | 1278054-STB18N60M6 | STB18N60M6 | STB18N60M6 | STB18N60M6 |
| Product Name | Single FETs, MOSFETs | N-Channel 600 V 230 mOhm 13 A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 600 volts |
