N-Channel 600V 12A (Tc) 90W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 12A (Tc) 90W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 12A (Tc) 90W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 600V 12A D2PAK
N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package Product overview: STB18N60DM2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 0.260 Ohm, 12 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 0.260 Ohm, 12 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB18N60DM2 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 935233-STB18N60DM2
Series: MDmesh™ DM2
Operating Temperature Range: 150°C (TJ)
Features: N-Channel 600 V 12A (Tc) 90W (Tc) Surface Mount D²PAK (TO-263)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Reel - TR
Mounting: Surface Mount
Family Name: STB18
Categories: Discrete Semiconductor Products
Case / Package: D2PAK (TO-263)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 80 pct.
Supply and Demand Status: Balance
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 37 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 497-16339-6, 497-16339-1, 497-16339-2
MOSFET N-channel 600 V, 0.26 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package
MOSFET N-CH 600V 12A D2PAK
MOSFET, N-CH, 600V, 12A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.26ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
(PRICE/TR), MOSFET, N-CH, 600V, 12A, TO-263; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:12A; DRAIN SOURCE VOLTAGE VDS:600V; ON RESISTANCE RDS(ON):0.26OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V; POWER DISSIPATION ROHS COMPL. FREE 2 YEAR RADWELL WARRANTY
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Radwell International | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 497-16339-1-ND | STB18N60DM2 | 278-STB18N60DM2 | 935233-STB18N60DM2 | STB18N60DM2 | STB18N60DM2 | 79Y9445 | 110230504 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 600 V 0.260 Ohm 12 A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB18N60DM2 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 12A, To-263; Transistor Polarity Stmicroelectronics | Transistor |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK (TO-263) | 800 pF @ 100 V | TO-3; TO-263 | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 600 volts | |||||||
| IDSS | 12000 milliamps | 12000 milliamps |
