Manufacturer: STMicroelectronics
Win Source Part Number: 935233-STB18N60DM2
Series: MDmesh™ DM2
Operating Temperature Range: 150°C (TJ)
Features: N-Channel 600 V 12A (Tc) 90W (Tc) Surface Mount D²PAK (TO-263)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Reel - TR
Mounting: Surface Mount
Family Name: STB18
Categories: Discrete Semiconductor Products
Case / Package: D2PAK (TO-263)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 80 pct.
Supply and Demand Status: Balance
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 37 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 497-16339-6, 497-16339-1, 497-16339-2
MOSFET N-CH 600V 12A D2PAK
N-Channel 600V 12A (Tc) 90W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 12A (Tc) 90W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 12A (Tc) 90W (Tc) Surface Mount D²PAK (TO-263)
(PRICE/TR), MOSFET, N-CH, 600V, 12A, TO-263; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:12A; DRAIN SOURCE VOLTAGE VDS:600V; ON RESISTANCE RDS(ON):0.26OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V; POWER DISSIPATION ROHS COMPL. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N-CH, 600V, 12A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.26ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
MOSFET N-CH 600V 12A D2PAK
MOSFET N-channel 600 V, 0.26 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Radwell International | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 935233-STB18N60DM2 | STB18N60DM2 | 497-16339-1-ND | 110230504 | 79Y9445 | STB18N60DM2 | STB18N60DM2 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB18N60DM2 | Single FETs, MOSFETs | Single FETs, MOSFETs | Transistor | Mosfet, N-Ch, 600V, 12A, To-263; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| TJ | 150 C (302 F) | 150 C (302 F) | |||||
| Package Type | TO-263; SOT3; D2PAK (TO-263) | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263 | 800 pF @ 100 V | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 600 volts |
