STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB16NK65Z-S STB16NK65Z-S

Description
Manufacturer: STMicroelectronics Win Source Part Number: 066277-STB16NK65Z-S Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 13A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 89nC @ 10V Max Input Capacitance: 2750pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 500 mOhm @ 6.5A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 066277-STB16NK65Z-S Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 13A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 89nC @ 10V Max Input Capacitance: 2750pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 500 mOhm @ 6.5A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB16NK65Z-S - 066277-STB16NK65Z-S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB16NK65Z-S
066277-STB16NK65Z-S
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB16NK65Z-S 066277-STB16NK65Z-S
Manufacturer: STMicroelectronics Win Source Part Number: 066277-STB16NK65Z-S Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 13A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 89nC @ 10V Max Input Capacitance: 2750pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 500 mOhm @ 6.5A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 066277-STB16NK65Z-S
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 13A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 100μA
Max Gate Charge: 89nC @ 10V
Max Input Capacitance: 2750pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 500 mOhm @ 6.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
650V 13A 0.5ohm MOSFET Transistor
285-STB16NK65Z-S
650V 13A 0.5ohm MOSFET Transistor 285-STB16NK65Z-S
650V 13A N-CH MOSFET, 0.5ohm, TO-262, Power Product overview: STB16NK65Z-S from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 13A, 0.5ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 13A, 0.5ohm, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-STB16NK65Z-S can be used for catalog matching and distributor lookup.

650V 13A N-CH MOSFET, 0.5ohm, TO-262, Power Product overview: STB16NK65Z-S from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 13A, 0.5ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 13A, 0.5ohm, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-STB16NK65Z-S can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 066277-STB16NK65Z-S 285-STB16NK65Z-S
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB16NK65Z-S 650V 13A 0.5ohm MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 650 volts
PD 190000 milliwatts 190000 milliwatts
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