STMicroelectronics, Inc. Single FETs, MOSFETs STB16N65M5

Description
N-Channel 650V 12A (Tc) 90W (Tc) Surface Mount D²PAK (TO-263)
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Description
N-Channel 650V 12A (Tc) 90W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

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Single FETs, MOSFETs - 497-11235-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-11235-2-ND
Single FETs, MOSFETs 497-11235-2-ND
N-Channel 650V 12A (Tc) 90W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 650V 12A (Tc) 90W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB16N65M5 - 1102767-STB16N65M5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB16N65M5
1102767-STB16N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB16N65M5 1102767-STB16N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 1102767-STB16N65M5 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 90W (Tc) Family Name: STB16N65M5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 1250pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 299 mOhm @ 6A, 10V Alternative Parts (Cross-Reference): IPB60R280C6XT; IPB65R380C6XT; AOB15S60; ECCN: EAR99 Estimated EOL Date: Obsolete Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1102767-STB16N65M5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 90W (Tc)
Family Name: STB16N65M5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 1250pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 299 mOhm @ 6A, 10V
Alternative Parts (Cross-Reference): IPB60R280C6XT; IPB65R380C6XT; AOB15S60;
ECCN: EAR99
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB16N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB16N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB16N65M5
MOSFET N-CH 650V 12A D2PAK

MOSFET N-CH 650V 12A D2PAK

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-11235-2-ND 1102767-STB16N65M5 STB16N65M5
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB16N65M5 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 650 volts
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