STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB15NM65N STB15NM65N

Description
Manufacturer: STMicroelectronics Win Source Part Number: 139021-STB15NM65N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 55nC @ 10V Max Input Capacitance: 1900pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 270 mOhm @ 7.75A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 139021-STB15NM65N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 55nC @ 10V Max Input Capacitance: 1900pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 270 mOhm @ 7.75A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB15NM65N - 139021-STB15NM65N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB15NM65N
139021-STB15NM65N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB15NM65N 139021-STB15NM65N
Manufacturer: STMicroelectronics Win Source Part Number: 139021-STB15NM65N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 55nC @ 10V Max Input Capacitance: 1900pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 270 mOhm @ 7.75A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 139021-STB15NM65N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 55nC @ 10V
Max Input Capacitance: 1900pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 270 mOhm @ 7.75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-7936-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-7936-2-ND
Single FETs, MOSFETs 497-7936-2-ND
N-Channel 650V 12A (Tc) 150W (Tc) Surface Mount D2PAK

N-Channel 650V 12A (Tc) 150W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB15NM65N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB15NM65N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB15NM65N
MOSFET N-CH 650V 12A D2PAK

MOSFET N-CH 650V 12A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 139021-STB15NM65N 497-7936-2-ND STB15NM65N
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB15NM65N Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 650 volts
PD 150000 milliwatts
Unlock Full Specs
to access all available technical data