STMicroelectronics, Inc. Single FETs, MOSFETs STB15N65M5

Description
MOSFET N-CH 650V 11A D2PAK
Request a Quote Datasheet
Description
MOSFET N-CH 650V 11A D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STB15N65M5 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STB15N65M5
Single FETs, MOSFETs STB15N65M5
MOSFET N-CH 650V 11A D2PAK

MOSFET N-CH 650V 11A D2PAK

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-12969-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12969-2-ND
Single FETs, MOSFETs 497-12969-2-ND
N-Channel 650V 11A (Tc) 85W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 650V 11A (Tc) 85W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
FETs - Single - STB15N65M5 - 1260604-STB15N65M5 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STB15N65M5
1260604-STB15N65M5
FETs - Single - STB15N65M5 1260604-STB15N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 1260604-STB15N65M5 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 85W Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 650V Id - Continuous Drain Current: 11A Rds On (Maximum) at Id, Vgs: 340mOhm at 5.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 22nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 810pF at 100V

Manufacturer: STMicroelectronics
Win Source Part Number: 1260604-STB15N65M5
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 85W
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 11A
Rds On (Maximum) at Id, Vgs: 340mOhm at 5.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 22nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 810pF at 100V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB15N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB15N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB15N65M5
MOSFET N-CH 650V 11A D2PAK

MOSFET N-CH 650V 11A D2PAK

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STB15N65M5 497-12969-2-ND 1260604-STB15N65M5 STB15N65M5
Product Name Single FETs, MOSFETs Single FETs, MOSFETs FETs - Single - STB15N65M5 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 650 volts 650 volts
IDSS 11000 milliamps
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