MOSFET N-CH 30V 80A D2PAK
Manufacturer: STMicroelectronics
Win Source Part Number: 1102765-STB155N3LH6
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 80nC @ 5V
Max Input Capacitance: 3800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient
N-Channel 30V 80A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 30V 80A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 30V 80A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-channel 30V 0.0024 Ohm, 80 A, D2PAK
MOSFET, N CH, 30V, 80A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Product Range:-RoHS Compliant: Yes
MOSFET N-CH 30V 80A D2PAK
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STB155N3LH6 | 1102765-STB155N3LH6 | 497-11323-1-ND | STB155N3LH6 | 47T9192 | STB155N3LH6 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB155N3LH6 | Single FETs, MOSFETs | MOSFET | Mosfet, N Ch, 30V, 80A, To-263; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 30 volts | 30 volts | ||||
| IDSS | 80000 milliamps | 80000 milliamps |
