600V 11A N-CH Power MOSFET, D2PAK, Surface Mount Product overview: STB13NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 600V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 600V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB13NM60N can be used for catalog matching and distributor lookup.
N-Channel 600V 11A (Tc) 90W (Tc) Surface Mount D2PAK
N-Channel 600V 11A (Tc) 90W (Tc) Surface Mount D2PAK
N-Channel 600V 11A (Tc) 90W (Tc) Surface Mount D2PAK
Manufacturer: STMicroelectronics
Win Source Part Number: 112687-STB13NM60N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 90W (Tc)
Family Name: STB13NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 790pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 360 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): IPB60R385CPATMA1; IPB65R420CFD; IPB60R385CPXT; IPB65R420CFDXT;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
MOSFET N-CH 600V 11A D2PAK
MOSFET, N CH, 600V, 11A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STB13NM60N | 497-STB13NM60NTR-ND | 112687-STB13NM60N | STB13NM60N | 71R6969 | STB13NM60N |
| Product Name | SMD 600V 11A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB13NM60N | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Ch, 600V, 11A, To-263; Channel Type Stmicroelectronics | MOSFET |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 600 volts | 600 volts | ||||
| PD | 90000 milliwatts | 90000 milliwatts | ||||
| TJ | -55 C (-67 F) | 150 C (302 F) |
