N-Channel 60V 80A (Tc) 160W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 60V 80A (Tc) 160W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 60V 80A (Tc) 160W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: STMicroelectronics
Win Source Part Number: 812973-STB130N6F7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 160W (Tc)
Popularity: Low
Fake Threat In the Open Market: 80 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 5mOhm at 40A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 42nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 2600pF at 25V
Current - Continuous Drain (Id) at 25°C: 80A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Part Number Series: STB130N
Maximum Vgs: ±20V
N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in D2PAK package Product overview: STB130N6F7 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V, 4.2 mOhm, 80 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, 4.2 mOhm, 80 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB130N6F7 can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 80A D2PAK
MOSFET N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in D2PAK package
MOSFET, N-CH, 60V, 80A, 175DEG C, 160W ROHS COMPLIANT: YES
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-15895-1-ND | 812973-STB130N6F7 | 278-STB130N6F7 | STB130N6F7 | STB130N6F7 | STB130N6F7 | 69AH2669 |
| Product Name | Single FETs, MOSFETs | FETs - Single - STB130N6F7 | N-Channel 60 V 4.2 mOhm 80 A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | Mosfet, N-Ch, 60V, 80A, 175Deg C, 160W Rohs Compliant Stmicroelectronics |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3 | ||
| PD | 160000 milliwatts | 160000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
