STMicroelectronics, Inc. FETs - Single - STB130N6F7 STB130N6F7

Description
Manufacturer: STMicroelectronics Win Source Part Number: 812973-STB130N6F7 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60V Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 160W (Tc) Popularity: Low Fake Threat In the Open Market: 80 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 5mOhm at 40A, 10V Gate Charge (Qg) (Maximum) at Vgs: 42nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 2600pF at 25V Current - Continuous Drain (Id) at 25°C: 80A (Tc) Vgs(th) (Maximum) at Id: 4V at 250μA Part Number Series: STB130N Maximum Vgs: ±20V
  • FETs - Single - STB130N6F7 - 812973-STB130N6F7 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-15895-2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-15895-1-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-15895-6-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - STB130N6F7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet, N-Ch, 60V, 80A, 175Deg C, 160W Rohs Compliant Stmicroelectronics - 69AH2669 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB130N6F7 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 812973-STB130N6F7 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60V Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 160W (Tc) Popularity: Low Fake Threat In the Open Market: 80 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 5mOhm at 40A, 10V Gate Charge (Qg) (Maximum) at Vgs: 42nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 2600pF at 25V Current - Continuous Drain (Id) at 25°C: 80A (Tc) Vgs(th) (Maximum) at Id: 4V at 250μA Part Number Series: STB130N Maximum Vgs: ±20V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STB130N6F7 - 812973-STB130N6F7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STB130N6F7
812973-STB130N6F7
FETs - Single - STB130N6F7 812973-STB130N6F7
Manufacturer: STMicroelectronics Win Source Part Number: 812973-STB130N6F7 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60V Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 160W (Tc) Popularity: Low Fake Threat In the Open Market: 80 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 5mOhm at 40A, 10V Gate Charge (Qg) (Maximum) at Vgs: 42nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 2600pF at 25V Current - Continuous Drain (Id) at 25°C: 80A (Tc) Vgs(th) (Maximum) at Id: 4V at 250μA Part Number Series: STB130N Maximum Vgs: ±20V

Manufacturer: STMicroelectronics
Win Source Part Number: 812973-STB130N6F7
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 160W (Tc)
Popularity: Low
Fake Threat In the Open Market: 80 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 5mOhm at 40A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 42nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 2600pF at 25V
Current - Continuous Drain (Id) at 25°C: 80A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Part Number Series: STB130N
Maximum Vgs: ±20V

Buy Now
Single FETs, MOSFETs - 497-15895-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15895-2-ND
Single FETs, MOSFETs 497-15895-2-ND
N-Channel 60V 80A (Tc) 160W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 60V 80A (Tc) 160W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 497-15895-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15895-1-ND
Single FETs, MOSFETs 497-15895-1-ND
N-Channel 60V 80A (Tc) 160W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 60V 80A (Tc) 160W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 497-15895-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15895-6-ND
Single FETs, MOSFETs 497-15895-6-ND
N-Channel 60V 80A (Tc) 160W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 60V 80A (Tc) 160W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - STB130N6F7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STB130N6F7
Single FETs, MOSFETs STB130N6F7
MOSFET N-CH 60V 80A D2PAK

MOSFET N-CH 60V 80A D2PAK

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STB130N6F7
MOSFET STB130N6F7
MOSFET N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in D2PAK package

MOSFET N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in D2PAK package

Buy Now Datasheet
Mosfet, N-Ch, 60V, 80A, 175Deg C, 160W Rohs Compliant Stmicroelectronics - 69AH2669 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 80A, 175Deg C, 160W Rohs Compliant Stmicroelectronics
69AH2669
Mosfet, N-Ch, 60V, 80A, 175Deg C, 160W Rohs Compliant Stmicroelectronics 69AH2669
MOSFET, N-CH, 60V, 80A, 175DEG C, 160W ROHS COMPLIANT: YES

MOSFET, N-CH, 60V, 80A, 175DEG C, 160W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB130N6F7 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB130N6F7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB130N6F7
MOSFET N-CH 60V 80A D2PAK

MOSFET N-CH 60V 80A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 812973-STB130N6F7 497-15895-2-ND STB130N6F7 STB130N6F7 69AH2669 STB130N6F7
Product Name FETs - Single - STB130N6F7 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 60V, 80A, 175Deg C, 160W Rohs Compliant Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
PD 160000 milliwatts 160000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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