STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB12NM50ND STB12NM50ND

Description
Manufacturer: STMicroelectronics Win Source Part Number: 010623-STB12NM50ND Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 100W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 850pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 380 mOhm @ 5.5A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 010623-STB12NM50ND Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 100W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 850pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 380 mOhm @ 5.5A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB12NM50ND - 010623-STB12NM50ND - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB12NM50ND
010623-STB12NM50ND
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB12NM50ND 010623-STB12NM50ND
Manufacturer: STMicroelectronics Win Source Part Number: 010623-STB12NM50ND Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 100W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 850pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 380 mOhm @ 5.5A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: STMicroelectronics
Win Source Part Number: 010623-STB12NM50ND
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 100W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 850pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 380 mOhm @ 5.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Singapore, Singapore
500V 11A MOSFET Transistor
278-STB12NM50ND
500V 11A MOSFET Transistor 278-STB12NM50ND
500V 11A N-CH MOSFET D2PAK, 290mR Rds(on) Product overview: STB12NM50ND from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB12NM50ND can be used for catalog matching and distributor lookup.

500V 11A N-CH MOSFET D2PAK, 290mR Rds(on) Product overview: STB12NM50ND from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB12NM50ND can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - 497-10026-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10026-2-ND
Single FETs, MOSFETs 497-10026-2-ND
N-Channel 500V 11A (Tc) 100W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 500V 11A (Tc) 100W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-channel 500 V 11 A Fdmesh

MOSFET N-channel 500 V 11 A Fdmesh

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB12NM50ND - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB12NM50ND
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB12NM50ND
MOSFET N-CH 500V 11A D2PAK

MOSFET N-CH 500V 11A D2PAK

Supplier's Site
Single FETs, MOSFETs - STB12NM50ND - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STB12NM50ND
Single FETs, MOSFETs STB12NM50ND
MOSFET N-CH 500V 11A D2PAK

MOSFET N-CH 500V 11A D2PAK

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 010623-STB12NM50ND 278-STB12NM50ND 497-10026-2-ND STB12NM50ND STB12NM50ND STB12NM50ND
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB12NM50ND 500V 11A MOSFET Transistor Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 500 volts 500 volts
PD 100000 milliwatts 100000 milliwatts 100000 milliwatts
TJ 150 C (302 F) -55 C (-67 F) 150 C (302 F)
Unlock Full Specs
to access all available technical data