STMicroelectronics, Inc. Single FETs, MOSFETs STB12NM50ND

Description
MOSFET N-CH 500V 11A D2PAK
Request a Quote Datasheet
Description
MOSFET N-CH 500V 11A D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STB12NM50ND - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STB12NM50ND
Single FETs, MOSFETs STB12NM50ND
MOSFET N-CH 500V 11A D2PAK

MOSFET N-CH 500V 11A D2PAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB12NM50ND - 010623-STB12NM50ND - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB12NM50ND
010623-STB12NM50ND
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB12NM50ND 010623-STB12NM50ND
Manufacturer: STMicroelectronics Win Source Part Number: 010623-STB12NM50ND Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 100W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 850pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 380 mOhm @ 5.5A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: STMicroelectronics
Win Source Part Number: 010623-STB12NM50ND
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 100W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 850pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 380 mOhm @ 5.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - 497-10026-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10026-2-ND
Single FETs, MOSFETs 497-10026-2-ND
N-Channel 500V 11A (Tc) 100W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 500V 11A (Tc) 100W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-channel 500 V 11 A Fdmesh

MOSFET N-channel 500 V 11 A Fdmesh

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB12NM50ND - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB12NM50ND
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB12NM50ND
MOSFET N-CH 500V 11A D2PAK

MOSFET N-CH 500V 11A D2PAK

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STB12NM50ND 010623-STB12NM50ND 497-10026-2-ND STB12NM50ND STB12NM50ND
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB12NM50ND Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts 500 volts
IDSS 11000 milliamps
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