800V N-Ch MOSFET, 10.5A, 750mR, D2PAK Product overview: STB12NK80ZT4 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 10.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 10.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB12NK80ZT4 can be used for catalog matching and distributor lookup.
N-Channel 800V 10.5A (Tc) 190W (Tc) Surface Mount D2PAK
N-Channel 800V 10.5A (Tc) 190W (Tc) Surface Mount D2PAK
N-Channel 800V 10.5A (Tc) 190W (Tc) Surface Mount D2PAK
Manufacturer: STMicroelectronics
Win Source Part Number: 795590-STB12NK80ZT4
Series: SuperMESH
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Family Name: STB12NK80
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: D2PAK
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 4.5V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs: 87nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2620pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 190W (Tc)
Rds On (Maximum) @ Id, Vgs: 750 mOhm @ 5.25A, 10V
Alternative Parts (Cross-Reference): R8008ANJTL; R8008ANJ FRGTL; FQB7N80TM-AM002; FQB7N80TM;
Introduction Date: October 01, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
MOSFET N-CH 800V 10.5A D2PAK
MOSFET TRANSISTOR, N CHANNEL, 5.25 A, 800 V, 650 MOHM, 10 V, 3.75 V ;ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 800V 10.5A D2PAK
MOSFET Transistor, N Channel, 5.25 A, 800 V, 650 mohm, 10 V, 3.75 V RoHS Compliant: Yes
MOSFET N-Ch 800 Volt 10.5A Zener SuperMESH
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Radwell International | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STB12NK80ZT4 | 497-4320-2-ND | 795590-STB12NK80ZT4 | STB12NK80ZT4 | 32265615 | STB12NK80ZT4 | 33R1100 | STB12NK80ZT4 |
| Product Name | 800V 10.5A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB12NK80ZT4 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | Single FETs, MOSFETs | Mosfet Transistor, N Channel, 5.25 A, 800 V, 650 Mohm, 10 V, 3.75 V Rohs Compliant Stmicroelectronics | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| PD | 190000 milliwatts | 190000 milliwatts | 190000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3 | 10V | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3; TO-252 (DPAK) |
